张保平
闽江学者特聘教授、博士生导师、系主任

日本东京大学 博士(1994)
研究方向: 
宽禁带半导体材料与光电子器件;微纳米结构制造及应用
所属部门: 
电子工程系
电子邮件: 
bzhang (AT) xmu.edu.cn
个人网址: 
主讲课程: 
固体物理学
凝聚态物理导论(研究生课)
微纳光电子材料与器件(研究生课)
指导研究生: 
蔡丽娥,博士(硕博连读), 2006-2011
张江勇,博士(中科院半导体所联合培养),2007-2010
江方,硕士, 2008-2011
曾绳卫,吴超敏,硕士, 2007-2010
尚景智,硕士, 2006-2009
学术兼职: 
《光电子》主编, 2011-
《半导体技术》理事, 2010-
太原理工大学 客座教授,2011-
在研项目: 
垂直结构InGaN 薄膜太阳能电池研究,面上项目,2013-2016
III族氮化物半导体微谐振腔中自发辐射特性研究,面上项目,2015-2018
代表性论文: 
王宇, *张江勇, 余健, 应磊莹, 张保平, 2014. InGaN/GaN多量子阱太阳电池的研制及特性研究, Semiconductor Optoelectronics,35(2): 206-210.
应磊莹, 刘文杰, 张江勇, 胡晓龙, *张保平, 2014. 激光剥离GaN表面的抛光技术, 半导体技术, 39 (10): 758-762.
Zhang J, *Ying L, Chen M, W Liu, Yu J, Zhang B, 2015. Improved heat dissipation in GaN-based thin-film light-emitting diode with lateral-electrode configuration, Science of Advanced Materials, 7: 283-286
Sun L, Weng G, Liang M, Ying L, Lv X, *Zhang J, *Zhang B, 2014. Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs, Physica E, 60: 166-169.
Liang M, Weng G, *Zhang J, Cai X, Lv X, Ying L, *Zhang B, 2014. Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum well, Chinese Physics B, 23 (5): 054211.
Liu W, Hu X, *Ying L, Zhang J, *Zhang B, 2014. Room temperature continuous wavelasing of electrically injected GaN-based vertical cavity surface emitting lasers, Applied Physics Letters, 104 (25): 251116.
Zhao W, Weng G, Liang M, Li Z, Liu J, Zhang J, *Zhang B, 2014. Temperature dependence of emission properties of self-assembled InGaN uantum dots, Chinese Physics Letters, 31(11): 114205.
陈少伟, *吕雪芹, 张江勇, 应磊莹, 张保平, 2013. 蓝紫光宽带可调谐光栅外腔半导体激光器, 激光与光电子学发展, 50(11): 111405.
*Cai X, Wang Y, Chen B, Liang M, Liu W, Zhang J, Lv X, Ying L, Zhang B, 2013. Investigation of InGaN p-i-n homojunction and heterojunction solar cells, IEEE Photonics Technology Letters, 25 (1): 59-62.
Chen M, *Zhang J, Lv X, Ying L, Zhang B, 2013. Effect of laser pulse width on the laser lift-off process of GaN film, Chinese Physics Letters, 30 (1): 014203.
*Weng G, Zhang B, Liang M, Lv X, Zhang J, Ying L, Qiu Z, Yaguchi H, Kuboya S, Onabe K, 2013. Optical propertites and carrier dynamics in asymmetric coupled InGaN multiple quantum wells, Functional Materials Letters, 6 (2): 1350021.
Cai X, Wang Y, Li Z, Lv X, Zhang J, Ying L, *Zhang B, 2013. Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers, Applied Physics A, 111 (2): 483-486.
*Weng G, Zhang B, Liang M, Lv X, Zhang J, Ying L, Qiu Z, Yaguchi H, Kuboya S, Onabe K, 2013. Optical propertites and carrier dynamics in asymmetric coupled InGaN multiple quantum wells, Functional Materials Letters, 6 (2): 1350021.
*Liu W, Chen S, Hu X, Liu Z, Zhang J, Ying L, Lv X, Akiyama H, Cai Z, Zhang B, 2013. Low threshold lasing of GaN-based VCSELs with sub-nanometer roughness polishing, IEEE Photonics Technology Letters, 25 (20): 2014-2017.
Chen M, *Zhang B, Cai L, Zhang J, Ying L, Lv X, 2013. Auto-Split laser lift-off technique for vertical-injection GaN-based green light-emitting diodes, IEEE Photonics Journal, 5 (4): 8400407.
Lv X, Chen S, Zhang J, Ying L, *Zhang B, 2013. Tuning properties of external cavity violet semiconductor laser, Chinese Physics Letters, 30 (7): 074204.
Cai X, Wang Y, Li Z, Lv X, Zhang J, Ying L, *Zhang B, 2013. Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers, Applied Physics A, 111 (2): 483-486.
孙丽, 张江勇, 陈明, 梁明明, 翁国恩, *张保平, 2013. p-GaN退火对InGaN量子阱光学性能的影响, 半导体技术, 38(1): 35-39.
X. L. Hu, W. J. Liu, G. E. Weng, J. Y. Zhang, X. Q. Lv, M. M. Liang, M. Chen, H. J. Huang, L. Y. Ying and B. P. Zhang*. "Fabrication and Characterization of High Quality Factor GaN-based Resonant-cavity Blue Light-emitting Diodes", IEEE Photonics Technolo
M. Chen, W. J. Liu, L. E. Cai, J. Y. Zhang, L. Sun, M. M. Liang, X. L. Hu, X. M. Cai, F. Jiang, X. Q. Lv, L. Y. Ying, Z. R. Qiu and B.P.Zhang*. "Fabrication of Veritcal-structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique",
J. Y. Zhang, W. J. Liu, M. Chen, X. L. Hu, X. Q. Lv, L. Y. Ying and B. P. Zhang*, "Performance Enhancement of GaN-based Light Emitting Diodes by Transfer from Sapphire to Silicon Substrate using Double-transfer Technique", Nanoscale Research Letters, 34 (
S. Lin, S. W. Zeng, X. M. Cai, J. Y. Zhang, S. X. Wu, L. Sun and B. P. Zhang*, "Simulation of Doping Levels and Deep Levels in InGaN-based Single-junction Solar Cell", J Mater Sci, 47 (2012) 4595-4603.
W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying and B. P. Zhang*. "Low-Temperature Bonding Technique for Fabrication of High-Power GaN-Based Blue Vertical Light-Emitting Diodes", Optical Materials, 34 (2
X. M. Cai, S. W. Zeng, X. Li, J. Y. Zhang, S. Lin, A. K. Ling, M. Chen, W. J. Liu, S. X. Wu and B. P. Zhang*. "Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature", IEEE Transactions on Eletron Devices, 58 (201
G. E. Weng, A. K. Ling, X. Q. Lv, J. Y. Zhang and B. P. Zhang*, "III-Nitride-Based Quantum Dots and Their Optoelectronic Applications", Nano-Micro Letters, 3 (2011) 200-207.
Zuo H, Zhang J, Ying L, * Zhang B , Hou Z, Chen H, Si J, 2014. Rigorous microlens design using Vector electromagnetic method combined with simulated annealing optimization, Optics Express, 22 (10): 12653-12658.
X. L. Hu, J. Y. Zhang, W. J. Liu, M. Chen and B. P. Zhang*, B. S. Xu, Q. M. Wang, "Resonant-cavity Blue Light-emitting Diodes Fabricated by Two-step Substrate Transfer Technique", Electronics Letters, 47 (2011) 17.
X. Q. Lv, J. Y. Zhang, W. J. Liu, X. L. Hu, M. Chen and B. P. Zhang*, "Optical Properties of ZnO/MgZnO Quantum Wells with Graded Thickness" , Journal of Physics D: Applied Physics, 44 (2011) 365401.
S. Lin, S. W. Zeng, X. M. Cai, J. Y. Zhang, S. X. Wu, A. K. Ling, G. E. Weng and B. P. Zhang* "Preparation and Properties of Ni/InGaN/GaN Schottky Barrier Photovoltaic Cells", Solid State Electronics, 63 (2011) 105-109.
C. M. Wu, J. Z. Shang, L. E. Cai, J. Y. Zhang, J. Z. Yu, Q. M. Wang and B. P. Zhang* "High-Reflectivity AlN/GaN Distributed Bragg Reflectors Grown on Sapphire Substrates by MOCVD", Semiconductor Science and Technology, 26 (2011) 055013.
L. E. Cai, J. Y. Zhang, C. M. Wu, F. Jiang, X. L. Hu, M. Chen, Q. M. Wang and B. P. Zhang* "Improvement of Efficiency Droop of GaN-based Light Emitting Devices by A Rear Nitride Reflector", Physica E, 43 (2010) 289-292.)
F. Jiang, L. E. Cai, J. Y. Zhang and B. P. Zhang*, "Formation of High Reflective Ni/Ag/Ti/Au Contact on p-GaN", Physica E, 42 (2010) 2420–2423.
X. L. Hu, J. Y. Zhang, J. Z. Shang, W. J. Liu and B. P. Zhang*, "The Exciton-longitudinal-optical-phonon Coupling in InGaN/GaN Single Quantum Well with Various Cap Layer Thicknesses", Chinese Physics B, (2010) 117801.
C. M. Wu, J. Z. Shang, J. Y. Zhang, J. Z. Yu, Q. M. Wang and B. P. Zhang* "Impact of Thickness of GaN Buffer Layer on Properties of AlN/GaN Distributed Bragg Reflectors Grown by Metalorganic Chemical Vapor Deposition", SCIENCE CHINA Technological Sciences
S. W. Zeng, X. M. Cai and B. P. Zhang*, "Demonstration and Study of Photovoltaic Performances of InGaN p-i-n Homojunction Solar Cells", IEEE J. Quantum Electronics, 46 (2010) 783.
X. M. Cai, S. W. Zeng and B. P. Zhang*, "Favourable Photovoltaic Effects in InGaN pin Homojunction Solar Cell", Electronics Letters, 24 (2009) 1266 .
C. Y. Liu*, B. P. Zhang, Z. W. Lu, N. T. Binh, K. Wakatsuki, Y. Segawa and R. Mu, "Fabrication and Characterization of ZnO Film Based UV Photodetector", J Mater Sci:Mater Electron, 20 (2009) 197.
J. Y. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu and Q. M. Wang*, "Efficient Hole Transport in Asymmetric Coupled InGaN Multiple Quantum Wells", Appl. Phys. Lett, 95 (2009) 161110.
X. M. Cai, S. W. Zeng and B. P. Zhang*, "Fabrication and Characterization of InGaN p-i-n Homojunction Solar Cell", Appl. Phys. Lett, 95 (2009) 173504.
S. W. Zeng, B. P. Zhang*, J. W. Sun, J. F. Cai, C. Chen and J. Z. Yu, "Substantial Photo-response of InGaN p-i-n Homojunction Solar Cells", Semiconductor Science and Technology, 24 (2009) 055009.
吴超敏,尚景智,张保平*,余金中,王启明,“蓝光波段高反射率AlN/GaN分布布拉格反射镜的制作”,半导体光电, 30 (2009) 555。
J. Z. Shang, B. P. Zhang*, M. H. Mao, L. E. Cai, J. Y. Zhang, Z. L. Fang, B. L. Liu, J. Z. Yu, Q. M. Wang, K. Kusakabe and K. Ohkawa, "Growth Behavior of AlInGaN Films", Journal of Crystal Growth, 311 (2009) 474 .
J. Y. Zhang, L. E. Cai, B. P. Zhang*, S. Q. Li, F. Lin, J. Z. Shang, D. X. Wang, K. C. Lin, J. Z. Yu and Q. M. Wang, "Blue-Violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface Emitting Laser With Dielectric Distributed Bragg Reflectors", Jo
J. W. Sun and B. P. Zhang*, "Well-width Dependence of Exciton-longitudinal-optical Phonon Coupling in MgZnO/ZnO Single Quantum Wells", Nanotechnology, 19 (2008) 485401.
J. Y. Zhang, L. E. Cai, B. P. Zhang*, S. Q. Li, F. Lin, J. Z. Shang, D. X. Wang, K. C. Lin, J. Z. Yu and Q. M. Wang*, "Low Threshold Lasing of GaN-based Vertical Cavity Surface Emitting Lasers with An Asymmetric Coupled Quantum Well Active Region", Appl.
J. Z. Shang, B. P. Zhang*, C. M. Wu, L. E. Cai, J. Y. Zhang, J. Z. Yu and Q. M. Wang, “High Al-content AlInGaN Epilayers with Different Thicknesses Grown on GaN-Sapphire Templates", Applied Surface Science, 255 (2008) 3350.
L. E. Cai, J. Y. Zhang, B. P. Zhang*, S. Q. Li, D. X. Wang, J. Z. Shang, F. Lin, K. C. Lin, J. Z. Yu and Q. M. Wang, "Blue-green Optically Pumped GaN-based Vertical Cavity Surface Emitting Laser", Electronics Letters, 44 (2008) 972.
尚景智,张保平*,吴超敏,蔡丽娥,张江勇,余金中,王启明,“MOCVD生长高反射率AlN/GaN分布布拉格反射镜”,光电子· 激光, 19 (2008) 1592。
X. L. Yuan, B. Dierre, J. B. Wang, B. P. Zhang* and T.Sekiguchi, "Spatial Distribution of Impurities in ZnO Nanotubes Characterized by Cathodoluminescence", J. Nanoscience and Nanotechnology, 7 (2007) 3323 .
B. P. Zhang*, B. L. Liu, J. Z. Yu, Q. M. Wang, C. Y. Liu, Y. C. Liu and Y. Segawa, "Photoluminescence and Built-in Electric Field in ZnO/Mg0.1Zn0.9O Quantum Wells", Appl. Phys. Lett, 90 (2007) 132113.
B. P. Zhang*, K. Shimazaki, T. Shiokawa, M. Suzuki, K. Ishibashi and R. Saito, "Stimulated Raman Scattering From Individual Single-wall Carbon Nanotubes", Appl. Phys. Lett, 88 (2006) 241101.
B. P. Zhang*, J. Y. Kang, J. Z. Yu, Q. M. Wang and Y. Segawa, "Growth and Optical Study of ZnO Films and Quantum Wells", hinese Journal of Semiconductors, 27 (2006) 613.

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