应磊莹
工程师

研究方向: 
半导体器件
所属部门: 
电子工程系
办公地址: 
厦门大学海韵园
电子邮件: 
lyying (AT) xmu.edu.cn
代表性论文: 
Zhang J, *Ying L, Chen M, W Liu, Yu J, Zhang B, 2015. Improved heat dissipation in GaN-based thin-film light-emitting diode with lateral-electrode configuration, Science of Advanced Materials, 7: 283-286
王宇, *张江勇, 余健, 应磊莹, 张保平, 2014. InGaN/GaN多量子阱太阳电池的研制及特性研究, Semiconductor Optoelectronics,35(2): 206-210.
应磊莹, 刘文杰, 张江勇, 胡晓龙, *张保平, 2014. 激光剥离GaN表面的抛光技术, 半导体技术, 39 (10): 758-762.
Sun L, Weng G, Liang M, Ying L, Lv X, *Zhang J, *Zhang B, 2014. Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs, Physica E, 60: 166-169.
Liang M, Weng G, *Zhang J, Cai X, Lv X, Ying L, *Zhang B, 2014. Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum well, Chinese Physics B, 23 (5): 054211.
Zuo H, Zhang J, Ying L, * Zhang B , Hou Z, Chen H, Si J, 2014. Rigorous microlens design using Vector electromagnetic method combined with simulated annealing optimization, Optics Express, 22 (10): 12653-12658.
Liu W, Hu X, *Ying L, Zhang J, *Zhang B, 2014. Room temperature continuous wavelasing of electrically injected GaN-based vertical cavity surface emitting lasers, Applied Physics Letters, 104 (25): 251116.
陈少伟, *吕雪芹, 张江勇, 应磊莹, 张保平, 2013. 蓝紫光宽带可调谐光栅外腔半导体激光器, 激光与光电子学发展, 50(11): 111405.
*Cai X, Wang Y, Chen B, Liang M, Liu W, Zhang J, Lv X, Ying L, Zhang B, 2013. Investigation of InGaN p-i-n homojunction and heterojunction solar cells, IEEE Photonics Technology Letters, 25 (1): 59-62.
Chen M, *Zhang J, Lv X, Ying L, Zhang B, 2013. Effect of laser pulse width on the laser lift-off process of GaN film, Chinese Physics Letters, 30 (1): 014203.
Cai X, Wang Y, Li Z, Lv X, Zhang J, Ying L, *Zhang B, 2013. Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers, Applied Physics A, 111 (2): 483-486.
*Weng G, Zhang B, Liang M, Lv X, Zhang J, Ying L, Qiu Z, Yaguchi H, Kuboya S, Onabe K, 2013. Optical propertites and carrier dynamics in asymmetric coupled InGaN multiple quantum wells, Functional Materials Letters, 6 (2): 1350021.
Lv X, Chen S, Zhang J, Ying L, *Zhang B, 2013. Tuning properties of external cavity violet semiconductor laser, Chinese Physics Letters, 30 (7): 074204.
*Liu W, Chen S, Hu X, Liu Z, Zhang J, Ying L, Lv X, Akiyama H, Cai Z, Zhang B, 2013. Low threshold lasing of GaN-based VCSELs with sub-nanometer roughness polishing, IEEE Photonics Technology Letters, 25 (20): 2014-2017.
Chen M, *Zhang B, Cai L, Zhang J, Ying L, Lv X, 2013. Auto-Split laser lift-off technique for vertical-injection GaN-based green light-emitting diodes, IEEE Photonics Journal, 5 (4): 8400407.
X. M. Cai, Y. Wang, Z. D. Li, X. Q. Lv, J. Y. Zhang, L. Y. Ying and B. P. Zhang*. "Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers".Applied Physics A.(2013 in press).
M. Chen, J. Y. Zhang*, X. Q. Lv, L. Y. Ying and B. P. Zhang*. "Effcet of Laser Pulse width on the Laser Lift-Off Process of GaN Film". Chinese Physics Letters. (2013 in press).
X. Q. Lv, J. Y. Zhang, L. Y. Ying, W. J. Liu, X. L. Hu, B. P. Zhang*, Z. R. Qiu, S. Kuboya, K. Onabe. "Well-width dependence of the emission-linewidth in ZnO/ MgZnO quantum wells". Nanoscale Research Letters. (2012) 7:605.
X. M. Cai, Y. Wang, B. H. Chen, M. M. Liang, W, J. Liu, J. Y. Zhang, X. Q. Lv, L. Y. Ying and B.P.Zhang*. "Investigation of InGaN p-i-n homojunction and heterojunction solar cells". IEEE Photonics Technology Letters. 25 (2012) 59- 62.
J. Y. Zhang, W. J. Liu, M. Chen, X. L. Hu, X. Q. Lv, L. Y. Ying, and B. P. Zhang."Performance Enhancement of GaN-based Light Emitting Diodes by Transfer from Sapphire to Silicon Substrate using Double-transfer Technique", Nanoscale Research Letters, (2012
T. T. Lin,L. Y. Ying and H. Hirayama, “Threshold Current Density Reduction by Utilizing High-Al-Composition Barriers in 3.7 THz GaAs/AlxGa1-xAs Quantum Cascade Lasers”, APPLIED PHYSICS EXPRESS, 5, 012101 (2012). (SCI)
W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang. "Low-Temperature Bonding Technique for Fabrication of High-Power GaN-Based Blue Vertical Light-Emitting Diodes", Optical Materials. 34, 1
M. Chen, W. J. Liu, L. E. Cai, J. Y. Zhang, L. Sun, M. M. Liang, X. L. Hu, X. M. Cai, F. Jiang, X. Q. Lv, L. Y. Ying, Z. R. Qiu, and B. P. Zhang. "Fabrication of Veritcal-structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique
X. L. Hu, W. J. Liu, G. E. Weng, J. Y. Zhang, X. Q. Lv, M. M. Liang, M. Chen, H. J. Huang, L. Y. Ying and B. P. Zhang*. "Fabrication and Characterization of High Quality Factor GaN-based Resonant-cavity Blue Light-emitting Diodes", IEEE Photonics Technolo

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